10
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5
MRF6V3090NBR1 MRF6V3090NBR5
470--860 MHz BROADBAND REFERENCE CIRCUIT
Table 7. MRF6V3090NR1(NBR1) 470--860 MHz Broadband 2″×3″Reference Circuit Component Designations and
Values
Part
Description
Part Number
Manufacturer
C1, C12
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C2
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C3
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C4, C5, C6
13 pF Chip Capacitors
ATC100B130JT500XT
ATC
C7, C8, C11
2.2 pF Chip Capacitors
ATC100B2R2JT500XT
ATC
C9
15 pF Chip Capacitor
ATC100B150JT500XT
ATC
C10
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC
C13
47
μF, 16 V Tantalum Capacitor
T491D476K016AS
Kemet
C14, C17, C19
2.2
μF, 100 V Chip Capacitors
C3225X7R2A225KT
TDK
C15, C16, C18
220 pF Chip Capacitors
ATC100B221JT200XT
ATC
C20
470
μF, 63 V Electrolytic Capacitor
MCGPR63V477M13X26--RH
Multicomp
Q1
RF High Power Transistor
MRF6V3090NBR1
Freescale
R1
10
?, 1/4 W Chip Resistor
CRCW120610RJ
Vishay
PCB
0.030″,
εr
=3.5
RO4350B
Rogers
相关PDF资料
MRF6V4300NR5 MOSFET RF N-CH 300W TO-270-4
MRF6VP11KHR6 MOSFET RF N-CH 1000W NI1230
MRF6VP121KHSR6 MOSFET RF N-CH 50V NI-1230S
MRF6VP21KHR6 MOSFET RF N-CH 1000W NI1230
MRF6VP2600HR6 MOSFET RF N-CH 600W NI1230
MRF6VP3091NBR1 MOSFET RF 50V 350MA TO272-4
MRF6VP3450HR6 MOSFET RF N-CH 450W NI-1230
MRF6VP41KHSR7 MOSFET RF N-CH 1000W NI1230S
相关代理商/技术参数
MRF6V4300NBR1 功能描述:射频MOSFET电源晶体管 VHV6 300W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V4300NBR5 功能描述:射频MOSFET电源晶体管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V4300NBR5-CUT TAPE 制造商:Freescale 功能描述:MRF6V4300 Series 600 MHz 110 V RF Power N-Channel Mosfet - TO-272-4
MRF6V4300NR1 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V4300NR1_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V4300NR5 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6VP11KGHSR5 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS
MRF6VP11KGHSR6 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS